Voltage Suppressor. ESD9B5V Datasheet

ESD9B5V Suppressor. Datasheet pdf. Equivalent


WillSEMI ESD9B5V
ESD9B5V
Ultra Small Profile, Bidirectional
Transient Voltage Suppressor
ESD9B5V
Http://www.willsemi.com
Descriptions
The ESD9B5V is an ESD transient voltage
suppression component which provides a very high
level of protection for sensitive electronic components
that may be subjected to electrostatic discharge (ESD).
It is particularly well-suited for cellular phones, portable
device, digital cameras, power supplies and many
other portable applications because of its small
package and low weight.
The ESD9B5V is Bidirectional, Safely dissipate ESD
strikes of Level 4, IEC61000-4-2, exceeding the
maximum requirement. Using the MILSTD-883
(Method 3015) specification for Human Body Model
(HBM) ESD, the device provides protection for contact
discharges to greater than +/-15KV.
12
Package Diagram
12
Pin Configuration
The ESD9B5V is available in a WBFBP-02C package
with peak reverse working voltage of 5 voltages.
Features
z Peak Reverse Working Voltage: 5V
z Peak power up to 100W @ 8 x 20 us Pulse
z Low leakage current
z High ESD protection Level: >+/-15KV per HBM
z IEC61000-4-2 Level 4 ESD Protection
z IEC61000-4-4 Level 4 EFT Protection
z Small Body Outline: 1.0 x 0.6 x 0.5mm
EB
EB = Special Device Code
Marking Diagram and explain
Applications
z Cell phone handsets and accessories
z Personal Digital Assistants (PDAs)
z Notebooks, Desktops, and Serves
z Portable Instrumentation
z Digital Cameras
z MP3/MP4/PMP Players
Order Information
Device
ESD9B5V-2/TR
Package
Shipping
WBFBP-02C 5000/Tape&Reel
Will Semiconductor Ltd.
1
May, 2008 – Ver1.3


ESD9B5V Datasheet
Recommendation ESD9B5V Datasheet
Part ESD9B5V
Description Transient Voltage Suppressor
Feature ESD9B5V; ESD9B5V Ultra Small Profile, Bidirectional Transient Voltage Suppressor ESD9B5V Http://www.willsemi.
Manufacture WillSEMI
Datasheet
Download ESD9B5V Datasheet




WillSEMI ESD9B5V
Maximum Ratings
Rating
Peak pulse power (tp=8/20 us)
Maximum peak pulse current (tp=8/20us)
ESD Per IEC61000-4-2 (Air)
ESD Per IEC61000-4-2 (Contact)
Maximum lead temperature for soldering during 10s
Storage temperature range
Operating temperature range
Electronics Parameter
Symbol Parameter
Vrwm Peak Reverse Working Voltage
Ir Reverse Leakage Current @ Vrwm
Vbr Breakdown Voltage @ It
It Test Current
Ipp Maximum Reverse Peak Pulse Current
Vc Clamping Voltage @ Ipp
Ppk Peak Power Dissipation
C Junction Capacitance
If Forward Current
Vf Forward Voltage @ If
Symbol
Ppk
Ipp
Vpp
TL
Tstg
Top
Value
100
8.7
+/-15
+/-8
260
-55 to +150
-55 to +150
ESD9B5V
Units
W
A
KV
oC
oC
oC
I
IPP
VC VBR VRWM IIRT
IR
IT
V
VRWM VBR VC
IPP
Bi−Directional TVS
Electronics Characteristics
Device
Marking Vrwm Ir (uA) Vbr (V) It Ipp
Vc (V)
(V) @Vrwm @ It (mA) (A) @ Max Ipp
(Note1)
Max. Max. Min. Typ. Max.
Max.
ESD9B5V-2/TR EB 5.0 0.5
7.5 1 8.7
12.5
Note 1: Vbr is measured with a pulse current It.
Note 2: Surge current waveform per Figure 1.
100
tr
90
80
70
60
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
50
40
30 tP
20
10
0
0 20 40 60 80
t, TIME (ms)
Figure1. 8x20us pulse waveform
Will Semiconductor Ltd.
2
Ppk (W)
(8 x 20us)
(Note2)
Typ.
100
C
(pF)
Typ.
30
May, 2008 – Ver1.3



WillSEMI ESD9B5V
Typical Performance Graph
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
6.6
6.5
6.4
6.3
ï 55
+ 25
TEMPERATURE (qC)
20
16
12
8
+ 150
4
0
ï55
ESD9B5V
+ 25
TEMPERATURE (qC)
+ 150
Figure2. Typical breakdown voltage vs temperature Figure3. Typical leakage current vs temperature
Will Semiconductor Ltd.
3
May, 2008 – Ver1.3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)