2N1959 (SILICON)
CASE 31
(TO·S)
NPN silicon annular transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
RBE = 10 ohms
Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Di...
