P-Channel Enhancement Mode Power MOSFET
Description
The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
● VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < ...
