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HM4487

P-Channel Enhancement Mode Power MOSFET

Description

HM4487 P-Channel Enhancement Mode Power MOSFET Description The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. D G General Features ● VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanc...

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