HM'
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM' uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 20V,ID =A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON)...
