HM4402C
N-Channel Enhancement Mode Power MOSFET
Description
The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
●VDS =20V,ID =12A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully cha...