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HM4438

N-Channel Enhancement Mode Power MOSFET

Description

+0 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) ● High density cell design for ultra low Rdson ● Fully characterized a...

H&M Semiconductor

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