HM4482
100VDS／±20VGS／2.5A(ID) N-Channel Enha ncement Mode MOSFET
Features
z VDSS=100V／VGSS=±20V／ID=2.5A
RDS(ON)=105mΩ(Max.)@VGS=10V RDS(ON)=115mΩ(Max.)@VGS=4.5V z ESD protect z Reliable and Rugged z High Density Cell Design For Ultra Low On-Resistance
Switching Time Test Circuit and Waveforms
H
SOP-8 top view
HM4482
HM4482
Rev. A.0 – Feb., 20...
