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HM4452

N-Channel Enhancement Mode Power MOSFET

Description

HM4452 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ) ● Special process technology for high ESD capability ● High density ...

H&M Semiconductor

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