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HM4488

N-Channel Enhancement Mode Power MOSFET

Description

+0 N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram ● High density cell design for ultra low Rdso...

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