40N120FL2 IGBT Datasheet

40N120FL2 Datasheet, PDF, Equivalent


Part Number

40N120FL2

Description

IGBT

Manufacture

ON Semiconductor

Total Page 10 Pages
Datasheet
Download 40N120FL2 Datasheet


40N120FL2
NGTB40N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
IC
1200
80
40
V
A
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM 200 A
IF A
80
40
Diode pulsed current, Tpulse limited
by TJmax
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
IFM
VGE
200 A
±20 V
±30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
535
267
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8
from case for 5 seconds
TSC
TJ
Tstg
TSLD
10
−55 to +175
−55 to +175
260
ms
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
40 A, 1200 V
VCEsat = 2.0 V
Eoff = 1.10 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
40N120FL2
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120FL2WG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1
Publication Order Number:
NGTB40N120FL2W/D

40N120FL2
NGTB40N120FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
RqJC
RqJC
RqJA
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 175°C
VGE = VCE, IC = 400 mA
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
VGE = 20 V , VCE = 0 V
Symbol
V(BR)CES
VCEsat
VGE(th)
ICES
IGES
Value
0.28
0.5
40
Min Typ
1200
4.5
2.00
2.40
5.5
Max
2.40
6.5
0.1
2
200
Unit
°C/W
°C/W
°C/W
Unit
V
V
V
mA
nA
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 600 V, IC = 40 A, VGE = 15 V
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Cies
Coes
Cres
Qg
Qge
Qgc
− 7385 −
− 230 −
− 140 −
− 313 −
− 61 −
− 151 −
pF
nC
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
TJ = 25°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
TJ = 175°C
VCC = 600 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15 V
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
− 116 −
ns
− 42 −
− 286 −
− 121 −
− 3.4 − mJ
− 1.1 −
− 4.5 −
− 111 −
ns
− 43 −
− 304 −
− 260 −
− 4.4 − mJ
− 2.5 −
− 6.9 −
DIODE CHARACTERISTIC
Forward voltage
VGE = 0 V, IF = 40 A
VF − 2.00 2.60 V
VGE = 0 V, IF = 50 A, TJ = 175°C
− 2.30 −
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 25°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr
− 240 −
ns
Qrr − 2.5 − mc
Irrm − 18 − A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TJ = 175°C
IF = 40 A, VR = 400 V
diF/dt = 200 A/ms
trr
− 392 −
ns
Qrr
− 5.36 −
mc
Irrm
− 25.80 −
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Features NGTB40N120FL2WG IGBT - Field Stop II T his Insulated Gate Bipolar Transistor ( IGBT) features a robust and cost effect ive Field Stop II Trench construction, and provides superior performance in de manding switching applications, offerin g both low on state voltage and minimal switching loss. The IGBT is well suite d for UPS and solar applications. Incor porated into the device is a soft and f ast co−packaged free wheeling diode w ith a low forward voltage. Features Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • O ptimized for High Speed Switching • 1 0 ms Short Circuit Capability • These are Pb−Free Devices Typical Applica tions • Solar Inverter • Uninterrup tible Power Inverter Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rat ing Symbol Value Unit Collector−e mitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES IC 1200 80 40 V A Pulsed collector current, Tpulse limited by TJmax Diod.
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