PE4425
P-Channel Enhancement Mode Power MOSFET
Description
The PE4425 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-40V,ID =-15A RDS(ON) <10mΩ @ VGS=-10V RDS(ON) <15mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully ...