N-Channel Enhancement Mode Power MOSFET
Description
The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and c...