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PED645N

semi one
Part Number PED645N
Manufacturer semi one
Description N-Channel Enhancement Mode Power MOSFET
Published Dec 3, 2018
Detailed Description PED645N N-Channel Enhancement Mode Power MOSFET Description The PED645N uses advanced trench technology to provide exce...
Datasheet PDF File PED645N PDF File

PED645N
PED645N

Overview
PED645N N-Channel Enhancement Mode Power MOSFET Description The PED645N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
It is ESD protested.
General Features ● VDS = 20V,ID =12 A RDS(ON) = 6.
0mΩ@ VGS=4.
5V RDS(ON) = 6.
5mΩ@ VGS=4.
2V RDS(ON) = 7.
5mΩ@ VGS=3.
8V RDS(ON) = 8.
2mΩ@ VGS=2.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view Application ●PWM application ●Load switch Absolute Maximum Ratings (TA=25℃unless ...


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