DESCRIPTION
The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
GENERAL FEATURES
●N-Channel VDS = 20V,ID = 6.8A RDS(ON) < 21mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
●P-Channel VDS = -20V,ID = -7A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) <...
