PE3050K
N-Channel Enhancement Mode Power MOSFET
Description
The PE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V
Schematic diagram
● High density cell design for ultra ...