PE3080K
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =80A RDS(ON) < 7.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson ● Fully c...
