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PE1520

semi one

N-Channel Enhancement Mode Power MOSFET


Description
PE1520 N-Channel Enhancement Mode Power MOSFET Description The PE1520 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID =20A RDS(ON) <85mΩ @ VGS=10V (Typ:70mΩ) ● High density cell design for ultra low Rdson ● Fully characterized ...



semi one

PE1520

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