P-Channel MOSFET. AFP1073E Datasheet

AFP1073E MOSFET. Datasheet pdf. Equivalent

AFP1073E Datasheet
Recommendation AFP1073E Datasheet
Part AFP1073E
Description P-Channel MOSFET
Feature AFP1073E; Alfa-MOS Technology General Description AFP1073E, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP1073E Datasheet




Alfa-MOS AFP1073E
Alfa-MOS
Technology
General Description
AFP1073E, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, such as smart
phone and notebook computer, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-723 )
AFP1073E
20V P-Channel
Enhancement Mode MOSFET
Features
-20V/-0.6A, RDS(ON)= 620 m@ VGS =-4.5V
-20V/-0.5A, RDS(ON)= 860 m@ VGS =-2.5V
-20V/-0.4A, RDS(ON)= 1250 m@ VGS =-1.8V
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
ESD Protection ( >2KV ) Diode design–in
Low Battery Voltage Operation
SOT-723 package design
Application
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Smart Phones, Pagers
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1073ES72RG
X
SOT-723
ϡʳ AFP1073ES52RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Oct. 2014
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
8000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP1073E
Alfa-MOS
Technology
AFP1073E
20V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
Typical
-20
±12
-0.7
-0.4
-1.0
-0.3
0.27
0.16
-55/150
-55/150
Unit
V
V
A
A
A
W
к
к
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Oct. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±4.5V
VDS=0V,VGS=±8V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=-4.5V,ID=-0.6A
VGS=-2.5V,ID=-0.5A
VGS=-1.8V,ID=-0.4A
VDS=-10V,ID=-0.4A
IS=-0.15A,VGS=0V
Ciss
Coss
Crss
VDS=-10V,VGS=0V
f=1MHz
Qg
Qgs
Qgd
VDS=-10V,VGS=-4.5V
ID-0.25A
td(on)
VDD=-10V,RL=30
tr ID-0.2A,VGEN=-4.5V
td(off)
RG=10
Min. Typ Max. Unit
-20 V
-0.4 -1.0
±1 uA
±10 uA
-1
-5 uA
0.7 A
400 620
580 860 m
950 1250
1S
0.65 1.2 V
70 100
20 pF
10
1.0 1.3
0.1 nC
0.3
10 15 ns
10 15
40 60
www.alfa-mos.com
Page 2



Alfa-MOS AFP1073E
Alfa-MOS
Technology
Typical Characteristics
tf
AFP1073E
20V P-Channel
Enhancement Mode MOSFET
30 50
©Alfa-MOS Technology Corp.
Rev.A Oct. 2014
www.alfa-mos.com
Page 3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)