P-Channel MOSFET. AFP3435W Datasheet

AFP3435W MOSFET. Datasheet pdf. Equivalent

AFP3435W Datasheet
Recommendation AFP3435W Datasheet
Part AFP3435W
Description P-Channel MOSFET
Feature AFP3435W; Alfa-MOS Technology General Description AFP3435W, P-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFP3435W Datasheet




Alfa-MOS AFP3435W
Alfa-MOS
Technology
General Description
AFP3435W, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-23-6L )
AFP3435W
200V P-Channel
Enhancement Mode MOSFET
Features
-200V/-1.0A,RDS(ON)=2400 m@VGS=-10V
-200V/-0.6A,RDS(ON)=2600 m@VGS=-4.5V
Super high density cell design for extremely
low RDS (ON)
Exceptional on-resistance and maximum DC
current capability
ESD Protection Diode design–in
SOT-23-6L package design
Application
Active Clamp Circuits in DC/DC Power Supplies
Pin Define
Pin
1
2
3
4
5
6
Symbol
D
D
G
S
D
D
Description
Drain
Drain
Gate
Source
Drain
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3435WS26RG
35WYW
SOT-23-6L
ϡʳ 35W parts code
ϡʳ Y year code ( 0 ~ 9 )
ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 )
ϡʳ AFP3435WS26RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
Unit
Tape & Reel
Quantity
3000 EA
www.alfa-mos.com
Page 1



Alfa-MOS AFP3435W
Alfa-MOS
Technology
AFP3435W
200V P-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25к
Tc=70к
TC=25к
TC=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
-150
±20
-1.0
-0.6
-1.6
-1.6
3.2
2.1
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=-250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=-160V,VGS=0V
VDS=-160V,VGS=0V
TJ=85к
VDSЊ-10V,VGS=-10V
VGS=-10V,ID=-1.0A
VGS=-4.5V,ID=-0.6A
VDS=-10V,ID=-0.5A
IS=-0.3A,VGS=0V
Qg
Qgs
Qgd
VDS=-75V,VGS=-10V
ID-0.5A
Ciss
Coss
Crss
VDS=-75V,VGS=0V
f=1MHz
td(on)
tr
td(off)
tf
VDD=-75V,RL=75
ID-1.0A,VGEN=-10V
RG=1.0
Min.
-200
-1.0
-0.6
Typ
2000
2100
1.5
-0.75
Max. Unit
-2.5
±10
-1
-30
2400
2600
-1.2
V
uA
uA
A
m
S
V
4.2
0.98
1.32
155
8
6
5
10
20
10
8
nC
pF
10
20
40
ns
20
www.alfa-mos.com
Page 2



Alfa-MOS AFP3435W
Alfa-MOS
Technology
Typical Characteristics
AFP3435W
200V P-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev.A Dec. 2015
www.alfa-mos.com
Page 3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)