Mode MOSFET. AFN8415W Datasheet

AFN8415W MOSFET. Datasheet pdf. Equivalent

AFN8415W Datasheet
Recommendation AFN8415W Datasheet
Part AFN8415W
Description N-Channel Enhancement Mode MOSFET
Feature AFN8415W; Alfa-MOS Technology General Description AFN8415W, N-Channel enhancement mode MOSFET, uses Advanced T.
Manufacture Alfa-MOS
Datasheet
Download AFN8415W Datasheet




Alfa-MOS AFN8415W
Alfa-MOS
Technology
General Description
AFN8415W, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOT-223 )
AFN8415W
150V N-Channel
Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=310m@VGS=10V
150V/1.0A,RDS(ON)=320m@VGS=6V
Super high density cell design for extremely
low RDS (ON)
SOT-223 package design
Application
Motor and Load Control
Power Management in White LED System
Push Pull Converter
LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
Ordering Information
Part Ordering No.
Part Marking
Package
AFN8415WS223RG
8415W
SOT-223
ϡʳ YY year code
ϡʳ WW week code
ϡʳ AFN8415WS223RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
Unit
Tape & Reel
Quantity
2500 EA
©Alfa-MOS Technology Corp.
Rev. A July 2016
www.alfa-mos.com
Page 1



Alfa-MOS AFN8415W
Alfa-MOS
Technology
AFN8415W
150V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25к
Tc=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
150
±20
2.0
1.5
8
1.6
2.8
1.2
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev. A July 2016
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=100V,VGS=0V
VDS=100V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=1.5A
VGS=6V,ID=1.0A
VDS=15V,ID=1.5A
IS=1.7A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=75V,VGS=10V
ID1.5A
VDS=50V,VGS=0V
f=1MHz
VDD=75V,RL=75
ID1.0A,VGEN=10V
RG=6
Min. Typ Max. Unit
150 V
2.0 4.0
±100
1
10
nA
uA
5A
270
290
310
320
m
4.1 S
0.85 1.2 V
5.5 10
1.2 nC
2.0
400
20 pF
15
10 20
10
25
20
50
ns
15 30
www.alfa-mos.com
Page 2



Alfa-MOS AFN8415W
Alfa-MOS
Technology
Typical Characteristics
AFN8415W
150V N-Channel
Enhancement Mode MOSFET
©Alfa-MOS Technology Corp.
Rev. A July 2016
www.alfa-mos.com
Page 3







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