N-Channel MOSFETs. SiZ988DT Datasheet

SiZ988DT MOSFETs. Datasheet pdf. Equivalent

SiZ988DT Datasheet
Recommendation SiZ988DT Datasheet
Part SiZ988DT
Description Dual N-Channel MOSFETs
Feature SiZ988DT; www.vishay.com SiZ988DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Chann.
Manufacture Vishay
Datasheet
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Vishay SiZ988DT
www.vishay.com
SiZ988DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) () (MAX.)
0.0075 at VGS = 10 V
0.0120 at VGS = 4.5 V
0.0041 at VGS = 10 V
0.0052 at VGS = 4.5 V
ID (A)
40 g
32 g
60
60
Qg (TYP.)
6.9 nC
15.4 nC
PowerPAIR® 6 x 5 G2
S2
S2
S2
6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
Ordering Information:
SiZ988DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Optimized Qgs/Qgs ratio improves switching
characteristics
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
40 g
60 a
32 g
60 a
17.5 b, c
27 b, c
14 b, c
21.7 b, c
70 140
16.8 33.6
3.2 b, c
4 b, c
10 20
5 20
20.2 40
12.9
25.8
3.8 b, c
4.8 b, c
2.4 b, c
3.1 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26 33 21 26
4.7 6.2 2.5 3.1
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
g. TC = 25 °C.
S15-2567-Rev. A, 02-Nov-15
1
Document Number: 66937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ988DT
www.vishay.com
SiZ988DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VDS
VGS(th)
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = 250 μA
Gate Source Leakage
IGSS VDS = 0 V, VGS = ± 20 V, -16 V
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
IDSS
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss / Ciss Ratio
ID(on)
RDS(on)
gfs
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 10 V, ID = 19 A
VGS = 4.5 V, ID = 8 A
VGS = 4.5 V, ID = 15 A
VDS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 10 A
Qg
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Output Charge
Qoss
VDS = 15 V, VGS = 0 V
Gate Resistance
Rg f = 1 MHz
MIN. TYP. MAX. UNIT
Ch-1
Ch-2
30
30
-
-
-
V
-
Ch-1 1.2 - 2.4
V
Ch-2 1.1 - 2.2
Ch-1
Ch-2
-
-
- ± 100
nA
- ± 100
Ch-1
-
-
1
Ch-2
Ch-1
-
-
-1
μA
- 10
Ch-2
-
- 10
Ch-1
Ch-2
25
25
-
-
-
A
-
Ch-1 - 0.0057 0.0075
Ch-2 - 0.0028 0.0041
Ch-1 - 0.0077 0.0120
Ch-2 - 0.0040 0.0052
Ch-1
-
54
-
S
Ch-2
-
52
-
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.4
0.3
1000
2425
280
730
34
65
0.034
0.027
14.3
34
6.9
15.4
2.8
5.8
1.6
2.6
7.8
20
1.6
1.7
-
-
-
-
-
-
0.068
0.054
21.5
51
10.5
23.1
-
-
-
-
-
-
3.2
3.4
pF
nC
S15-2567-Rev. A, 02-Nov-15
2
Document Number: 66937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay SiZ988DT
www.vishay.com
SiZ988DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Dynamic a
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Ch-1
Ch-2
Ch-1
Ch-2
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Ch-1
Ch-2
Pulse Diode Forward Current (t = 100 μs) ISM
Ch-1
Ch-2
Body Diode Voltage
Body Diode Reverse Recovery Time
VSD
trr
IS = 5 A, VGS = 0 V
IS = 10 A, VGS = 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Body Diode Reverse Recovery Charge
Qrr
Channel-1
Ch-1
IF = 5 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-2
Reverse Recovery Fall Time
Channel-2
Ch-1
ta IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Ch-2
Reverse Recovery Rise Time
tb
Ch-1
Ch-2
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
20
10
15
15
25
7
10
10
10
10
10
15
27
5
10
-
-
-
-
0.77
0.8
19
31
7
19
10
14
9
17
MAX. UNIT
30
40
20
30
30
50
15
20
ns
20
20
20
20
30
50
10
20
16.8
33.6
A
70
140
1.2
V
1.2
35
ns
62
14
nC
40
-
-
ns
-
-
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2567-Rev. A, 02-Nov-15
3
Document Number: 66937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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