Switching MOSFET. QN3103M6N Datasheet

QN3103M6N MOSFET. Datasheet pdf. Equivalent

QN3103M6N Datasheet
Recommendation QN3103M6N Datasheet
Part QN3103M6N
Description N-Channel 30V Fast Switching MOSFET
Feature QN3103M6N; QN3103M6N N-Channel 30V Fast Switching MOSFET General Description The QN3103M6N is the highest perf.
Manufacture UBIQ
Datasheet
Download QN3103M6N Datasheet




UBIQ QN3103M6N
QN3103M6N
N-Channel 30V Fast Switching MOSFET
General Description
The QN3103M6N is the highest performance
trench N-Channel MOSFET with extreme high
cell density , which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications .
The QN3103M6N meet the RoHS and Green
Product requirement with full function reliability
approved.
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
Product Summary
BVDSS
30V
RDSON
(VGS=10V)
6.3mΩ
ID
(TC=25)
68A
Applications
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
PRPAK 5X6 Pin Configuration
D
Absolute Maximum Ratings
SS S G
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient1
Thermal Resistance Junction-Case1
Rating
30
±20
68
43
14
11
136
51.5
32.1
46
2.0
-55 to 150
-55 to 150
Typ.
---
---
Max.
62
2.7
Units
V
V
A
A
A
A
A
mJ
A
W
W
Unit
/W
/W
1 Rev A.02 D052317



UBIQ QN3103M6N
QN3103M6N
N-Channel 30V Fast Switching MOSFET
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=4.5V , ID=15A
VGS=VDS , ID =250uA
VDS=24V , VGS=0V , TJ=25
VDS=24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=15A
VDS=0V , VGS=0V , f=1MHz
VDS=15V , VGS=4.5V , ID=15A
VDD=15V , VGS=10V , RG=3.3
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
30
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.01
5.0
6.9
---
-4.0
---
---
---
28.1
1.3
15.8
8.1
2.4
3.3
7
43
16
6
850
512
68
Max.
---
---
6.3
9.0
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy5
Conditions
VDD=25V , L=0.1mH , IAS=23A
Min.
26.45
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min.
VG=VD=0V , Force Current
---
---
VGS=0V , IS=1A , TJ=25
---
---
IF=15A , dI/dt=100A/µs , TJ=25
---
Typ.
---
---
---
34.9
16.8
Max.
68
136
1.2
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH
4.The power dissipation is limited by 150junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
nS
nC
2 Rev A.02 D052317



UBIQ QN3103M6N
Typical Characteristics
QN3103M6N
N-Channel 30V Fast Switching MOSFET
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3 Rev A.02 D052317







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