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SSC8027GS6

Part Number	SSC8027GS6
Manufacturer	AFSEMI
Description	P-Channel Enhancement Mode MOSFET
Published	Dec 15, 2018
Detailed Description	SSC8027GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A ...
Datasheet	SSC8027GS6 PDF File

Overview

SSC8027GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.
This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.
Excellent thermal and electrical capabilities.
 Package Information D: Drain; G: Gate; S: Sour...

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SSC8027GS6 P-Channel Enhancement Mode MOSFET - AFSEMI

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