Mode MOSFET. SSC8036GN2 Datasheet

SSC8036GN2 MOSFET. Datasheet pdf. Equivalent

SSC8036GN2 Datasheet
Recommendation SSC8036GN2 Datasheet
Part SSC8036GN2
Description N-Channel Enhancement Mode MOSFET
Feature SSC8036GN2; SSC8036GN2 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 19mR@10V .
Manufacture AFSEMI
Datasheet
Download SSC8036GN2 Datasheet




AFSEMI SSC8036GN2
SSC8036GN2
N-Channel Enhancement Mode MOSFET
Features
VDS
30V
VGS
±20V
RDSon TYP
19mR@10V
32mR@4V5
ID
7A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
Top View
Package Information
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8036GN2
SSC8036GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1 VGS@10V TC = 25°C
Continuous Drain Current 1 VGS@10V TC = 100°C
Continuous Drain Current 2 VGS@10V TA = 25°C
Continuous Drain Current 2 VGS@10V TA = 70°C
Plused Drain Current 3
Repetitive avalanche energy L=0.1mH 3
Power Dissipation 1 TC = 25°C
Power Dissipation 1 TC = 100°C
Power Dissipation 2 TA = 25°C
Power Dissipation 2 TA = 70°C
Storage and Junction Temperature Range
Symbol
VDSS
VGSS
ID
IDSM
IDM
EAS
PD
PDSM
TJ, TSTG
Maximum
10S Steady
30
±20
7
5
4 3.2
3 2.3
27
56
8
3.1
2.6
1.3
-55 to +150
Thermal Characteristics
Unit
V
V
A
A
A
A
A
mJ
W
W
W
W
°C
Parameter
Maximum Junction-to-Ambient2
Maximum Junction-to-Ambient 2 4
Maximum Junction-to-Case
t10S
Steady-State
Steady-State
Symbol
RJA
RJC
Typ
37
71
15
Max
48
90
21
Units
°C/W
°C/W
°C/W
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AFSEMI SSC8036GN2
SSC8036GN2
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateBody Leakage Current
Zero Gate Voltage Drain Current
DrainSource OnState Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
TurnOff Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID =250 uA
VGS = ±20 V, VDS = 0 V
VDS = 24 V, VGS = 0 V
VGS = 10 V, ID = 5.8 A
VGS = 4.5 V, ID = 5 A
VDS = 5 V, ID = 5 A
VGS = 0 V, IS = 1 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDS = 15 V, RL = 2.3R,
VGS = 10V, RGEN=3R
Min Typ Max
Unit
30 -- -- V
1 1.5 2
V
--
--
±100
nA
-- -- 1 uA
-- 19 25
mR
-- 32 40
10 15
--
S
-- 0.71 1
V
-- 402 --
-- 90 -- pF
-- 63 --
-- -- 17
ns
-- -- 67
Note :
1. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heat sinking is used.
2. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation PDSM is based on RJA t 10s value and the maximum allowed junction temperature of
150°C. The value in any given application depends on the user's specific board design.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty
cycles to keep initial TJ =25°C.
4. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
SSC-V1.0
http://www.afsemi.com
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