Mode MOSFET. SSC8030GQ4 Datasheet

SSC8030GQ4 MOSFET. Datasheet pdf. Equivalent

SSC8030GQ4 Datasheet
Recommendation SSC8030GQ4 Datasheet
Part SSC8030GQ4
Description N-Channel Enhancement Mode MOSFET
Feature SSC8030GQ4; SSC8030GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8 mR@10V .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8030GQ4
SSC8030GQ4
N-Channel Enhancement Mode MOSFET
Features
VDS
30V
VGS
±20V
RDSon TYP
8 mR@10V
10mR@4V5
ID
19A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB
DCDC conversion
Pin configuration
Bottom View
Package Information
SSC-1V0
Package: DFN3X3
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AFSEMI SSC8030GQ4
SSC8030GQ4
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Plused Drain Current (Note 2)
Total Power Dissipation (Note 1)
Repetitive avalanche energy L=0.1mH C
Storage Junction Temperature Range
VDSS
VGSS
ID
IDM
PD
EAS
TJ, TSTG
N-channel
30
±20
19
90
2
30
-55 to +150
Unit
V
V
A
A
W
mJ
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateBody Leakage Current
Zero Gate Voltage Drain Current
DrainSource OnState Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
TurnOff Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250μA
VDS = VGS, ID =250μA
VGS = ±20 V, VDS = 0 V
VDS = 24 V, VGS = 0 V
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 12 A
VDS = 15 V, ID = 12 A
VGS = 0 V, IS = 1A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDS = 15 V, RL = 2.3R,
VGS = 10V, RGEN=3R
Min Typ Max
Unit
30 -- -- V
1 -- 3 V
--
--
±100
nA
-- -- 1 uA
-- 8 11
mR
-- 10 14
8 16 -- S
-- 0.8 1.5 V
-- 1200 --
-- 200 --
pF
-- 105 --
-- -- 18
ns
-- -- 70
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DC<10stest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-1V0
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AFSEMI SSC8030GQ4
3. Typical Performance Characteristics
30
V =10.0V
GS
25
V =4.5V
GS
20
V =3.5V
GS
15
10 V =3.0V
GS
5
0
012345
V , Drain-Source Voltage (V)
DS
Fig1. Output Characteristics
SSC8030GQ4
6
5
4
3
125oC
2
1
85oC
25oC
-55oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V , Gate-to-source Voltage(V)
GS
Fig2. Transfer Characteristics
2000
1600
1200
800
400
0
0 5 10 15 20
V , Drain-to-Source Voltage (V)
DS
Fig3. Capacitance
20
15 V =4.5V
GS
10
V =10V
GS
5
0
-25 0 25 50 75 100 125 150
Tj, Junction Temperature (oC)
Fig4. On Resistance vs. Temperature
2.5 10
2.0
1
1.5
1.0 I =250uA
D 0.1
0.5
0.0
-25 0 25 50 75 100 125
Tj, Junction Temperature (oC)
Fig5. Gate Threshold vs. Temperature
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , Drain-Source Voltage (V)
DS
Fig6. Diode Forward Characteristics
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SSC-1V0
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