Mode MOSFET. SSC8322GN2 Datasheet

SSC8322GN2 MOSFET. Datasheet pdf. Equivalent

SSC8322GN2 Datasheet
Recommendation SSC8322GN2 Datasheet
Part SSC8322GN2
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8322GN2; SSC8322GN2 Dual N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 50mR@4V.
Manufacture AFSEMI
Datasheet
Download SSC8322GN2 Datasheet




AFSEMI SSC8322GN2
SSC8322GN2
Dual N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±12V
RDSon TYP
50mR@4V5
65mR@2V5
ID
4A
Applications
Li Battery Charging;
DC/DC Converter;
Load Switch;
Power Management in Portable, Battery
Powered Devices
Pin Configuration
Top View
General Description
SSC8322GN2 combines 2 N-Channel enhancement
mode power MOSFETs which are produced with high
cell density and DMOS trench technology .This device
particularly suits low voltage applications, especially for
battery powered circuits, the tiny and thin outline saves
PCB consumption.
Package Information
Package:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.95 2 2.08
B 1.95 2 2.08
C 0.5 0.6 0.7
D 0.9 1 1.1
E
0.545
0.575
0.605
F - 0.13 -
G 0.2 0.25 0.3
H 0.25 0.3 0.35
I - 0.65 -
J - 0.45 -
K - 0.15 -
L - 0.23 -
SSC-1V0
http://www.afsemi.com
1/4
Analog Future



AFSEMI SSC8322GN2
SSC8322GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
20
±12
4
20
1.5
-55 to +150
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
GateBody Leakage
OFF CHARACTERISTICS
V(BR)DSS VGS = 0 V, ID = 10uA
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±12 V, VDS = 0 V
ON CHARACTERISTICS(2)
20 --
-- --
-- --
Gate Threshold Voltage
Static DrainSource On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 50uA
RDS(ON)
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
GFS VDS = 5 V, ID = 3.6 A
DYNAMIC CHARACTERISTICS
0.4 0.75
-- 50
-- 65
2 7.7
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
-- 450
-- 70
-- 43
SWITCHING CHARACTERISTICS
TurnOn Delay Time
TurnOn Rise Time
TurnOff Delay Tim
TurnOff Fall Time
TD(ON)
TR
TD(OFF)
VDD = 5 V, ID = 3.6A,
VGS =4.5 V,RGEN=6R
TF
-- --
-- --
-- --
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
0.6 0.8
Unit
V
V
A
W
°C
Max Unit
--
1
±100
V
uA
nA
1.2 V
85
mR
115
14 S
--
-- pF
--
15
80
nS
60
25
1.15 V
SSC-1V0
http://www.afsemi.com
2/4
Analog Future



AFSEMI SSC8322GN2
SSC8322GN2
Typical Performance Characteristics
10
V =2.0V
GS
8
6
V =2.5,3.0,3.5,4.0,4.5V
GS
4
V =1.5V
GS
2
V =1.0V
GS
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
70
I =3.6A,V =4.5V
D GS
60
50
40
30
20
10
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On-Resistance vs. Temperature
20
25oC,V =1.5V
DS
16
12
8
4
0
1.0 1.5 2.0 2.5 3.0
V , Gate-to-Source Voltage (V)
GS
Figure 2. Transfer Characteristics
1.2
I =50uA,V =VGS
D DS
1.0
0.8
0.6
0.4
0.2
0.0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold Vs.Temperature
700
f=1.0MHz
600
500
Ciss
400
300
200
100
0
0
Coss
Crss
2468
V , Drain Source Voltage
DS
Figure 3. Capacitance
10
10
1
0.1
0.4 0.6 0.8 1.0 1.2
V , Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage
vs. Source Current
3/4
SSC-1V0
http://www.afsemi.com
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)