Mode MOSFET. SSC8323GN3 Datasheet

SSC8323GN3 MOSFET. Datasheet pdf. Equivalent

SSC8323GN3 Datasheet
Recommendation SSC8323GN3 Datasheet
Part SSC8323GN3
Description Dual P-Channel Enhancement Mode MOSFET
Feature SSC8323GN3; SSC8323GN3 Dual P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8323GN3
SSC8323GN3
Dual P-Channel Enhancement Mode MOSFET
Features
VDS
-20V
VGS
±12V
RDSon TYP
60mR@-4V5
75mR@-2V5
105mR@-1V8
ID
-3.5A
Applications
Li Battery Charging;
High Side DC/DC Converter;
Load Switch;
Power Management in Portable, Battery
Powered Devices
Pin configuration
Top View
General Description
SSC8323GN3 combines 2 P-Channel enhancement
mode power MOSFETs which are produced with high
cell density and DMOS trench technology .This device
particularly suits low voltage applications, especially for
battery powered circuits, the tiny and thin outline saves
PCB consumption.
Package Information
8765
D1 D1 D2 D2
S1 G1 S2 G2
123 4
Package:DFN3x2
Unit:mm
Dim Min Typ Max
A 0.7 0.8 0.9
A1 0
--- 0.05
A3 0.20 BSC
D 2.92 3 3.08
D1 0.82
1.02
E 1.92 2 2.08
E1 0.2
0.4
k 0.20 MIN
b 0.25 0.3 0.35
e 0.65 BSC
L 0.27 0.35 0.43
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AFSEMI SSC8323GN3
SSC8323GN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±12
V
Drain Current (Note 1)
Continuous
Pulsed
-3.5
ID A
-25
Power Dissipation Derating above TA = 25°C (Note 1)
Pd 1.2 W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Test Conditions
P-channel MOSFET
V(BR)DSS
VGS = 0V, ID = -250uA
IDSS VDS = -20V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
VGS(TH)
VDS = VGS, ID = -250uA
RDS (ON)
ID = -2.8A,VGS = -4.5V
ID = -2.3A,VGS = -2.5V
ID = -0.5A,VGS = -1.8V
Diode Forward Voltage
VSD VGS = 0 V, IS = -0.9A
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
Turn-Off Fall Time
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Note 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±100
-0.50 -0.70 -1.20
60 95
--
75 130
--
105 180
-- -0.71 1.2
-- 20 --
-- 18 --
-- 300 --
-- 120 --
-- 450 --
-- 180 --
-- 90 --
V
uA
nA
V
mR
V
ns
pF
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AFSEMI SSC8323GN3
SSC8323GN3
P-channel MOSFET Typical Performance Characteristics
15
V = -6V
GS
12
9
V = -4.5V
GS
V = -2.5V
GS
6
V = -1.5V
GS
3
V = -1V
GS
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
4
V = -200mV
DS
3
V = -100mV
2 DS
V = -50mV
1 DS
0
0 2 4 6 8 10
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
90
V = -2.5V
80 GS
70
V = -4.5V
GS
60
50
40
0 2 4 6 8 10
I , Drain Current (A)
D
Figure 3. On Resistance VS I
D
800
600
Ciss
400
200
0
0
Coss
Crss
5 10 15
V , Drain-Source Voltage (V)
DS
Figure 4. Capacitance
20
100
80
VGS= -4.5V, ID= -3A
60
VGS= -8V, ID= -3A
40
20
-40
0
40 80 120 160
Tj Junction Temperature (oC)
Figure 5 . On resistance VS Temperature
500
400
300
200
100
0
0.0 0.2 0.4 0.6 0.8 1.0
V , Drain-Source Voltage (V)
DS
Figure 6. Body Diode Forward Characteristics
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