Power BJT. SSCP005GS3 Datasheet

SSCP005GS3 BJT. Datasheet pdf. Equivalent

SSCP005GS3 Datasheet
Recommendation SSCP005GS3 Datasheet
Part SSCP005GS3
Description High Frequency High Gain PNP Power BJT
Feature SSCP005GS3; SSCP005GS3 High Frequency High Gain PNP Power BJT  Features PNP BJT VCE -40v VBE -6v Vcesat typ.
Manufacture AFSEMI
Datasheet
Download SSCP005GS3 Datasheet




AFSEMI SSCP005GS3
SSCP005GS3
High Frequency High Gain PNP Power BJT
Features
PNP BJT
VCE
-40v
VBE
-6v
Vcesat typ
-150mv
Ic
-3A
Applications
battery powered circuits
low in-line power dissipation circuits
Pin configuration
General Description
This device is produced with advanced high carrier
density technology, which is especially used to
minimize saturation voltage drop. This device
particularly suits low voltage applications such as
portable equipment, power management and other
battery powered circuits, and low in-line power
dissipation are needed in a very small outline surface
mount package. Excellent thermal and electrical
capabilities.
Package Information
Pin configuration(Top view)
SSC-1V0
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AFSEMI SSCP005GS3
SSCP005GS3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current TA = 25°C (Note 1)
Collector Current TA = 70°C (Note 2)
IC
Pulse collector current(Note3)
ICM
Power Dissipation Derating above TA = 25°C(Note 1)
Power Dissipation Derating above TA = 70°C(Note 2)
Pd
Operating and Storage Junction Temperature Range
TJ, TSTG
Note1. Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper.
Note2. Surface mounted on FR-4 board using minimum pad size, 1oz copper
Note3. Pulse width=300µs, Duty Cycle
P-channel
-40
-40
-6
-3
-2
-6
3.0
1.5
-55 to +150
Unit
V
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut off current
Emitter cut off current
DC Current Gain
Collector-Emitter Saturation Voltage
Note 4.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCESAT
Test Conditions
IC=-50uAIB=0mA
IC=-1mAIB=0mA
IE=-1uAIC=0mA
VCB=-20V,IE=0mA
VEB=-4V,IC=0mA
VCE=-2V,IC=-500mA
IC=-1.5A,IB=-80mA
Surface Mounted on FR4 Board, t < 10 sec.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
Min Typ Max
-40
-40
-8
1
1
100 200 350
-0.15 -0.2
Unit
V
V
V
uA
uA
V
SSC-1V0
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AFSEMI SSCP005GS3
Typical Performance Characteristics
SSCP005GS3
SSC-1V0
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