Mode MOSFET. SSC8K23GN2 Datasheet

SSC8K23GN2 MOSFET. Datasheet pdf. Equivalent

SSC8K23GN2 Datasheet
Recommendation SSC8K23GN2 Datasheet
Part SSC8K23GN2
Description P-Channel Enhancement Mode MOSFET
Feature SSC8K23GN2; SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode  Features P-MOSFET VDS VGS RDSo.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8K23GN2
SSC8K23GN2
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
P-MOSFET
VDS VGS
RDSon TYP
135mR@-4V5
ID
Applications
Bidirectional blocking switch;
DC-DC conversion applications;
Li-battery charging;
-20V ±8V
Schottky
180mR@-2V5
240mR@-1V8
-2A
Pin configuration
Top View
VR IR
VF
20V 35uA 410mV@0.5A
General Description
IO
1A
654
KG
S
SSC8K23GN2 combines a P-Channel enhancement
mode power MOSFET which is produced with high
KD
cell density and DMOS trench technology and a low
forward voltage schottky diode. the tiny and thin
outline saves PCB consumption.
A NC D
123
Package Information
ackage:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.95 2 2.08
B 1.95 2 2.08
C 0.5 0.6 0.7
D 0.9 1 1.1
E
0.545
0.575
0.605
F - 0.13 -
G 0.2 0.25 0.3
H 0.25 0.3 0.35
I - 0.65 -
J - 0.45 -
K - 0.15 -
L - 0.23 -
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AFSEMI SSC8K23GN2
SSC8K23GN2
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current (Note 1)
Continuous
Pulsed
ID
Schottky Reverse Voltage
VR
Schottky Continuous Forward Current
Power Dissipation Derating above TA = 25°C (Note 2)
IF
Pd
Junction and Storage Temperature Range
TJ, TSTG
Note1: Devices mounted on FR4 PCB with minima soldering pad;
Note2: For a single chip.
Ratings
-20
±8
-2
-8
20
1
1.1
-55 to +150
Unit
V
A
V
A
W
°C
Electrical Characteristics @TA=25unless otherwise noted
Parameter (Note 3)
Symbol
Test Conditions
P-channel MOSFET
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = -250uA
Zero Gate Voltage Drain Current
IDSS
VDS = -20V, VGS = 0V
Gate-Body Leakage
IGSS VGS = ±8V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250uA
Static Drain-Source On-Resistance
RDS (ON)
ID = -1A,VGS = -4.5V
ID = -1A,VGS = -2.5V
ID = -1A,VGS = -1.8V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
Turn-Off Fall Time
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -6V, VGS = 0V,
f = 1.0 MHz
Schottky Diode
Forward Voltage Drop
VF IF=1A
Maximum reverse leakage current
IR
Note3: Short duration test pulse used to minimize self-heating effect.
VR=20V
Min Typ Max Unit
-20 -- --
-- -- 1
-- -- ±100
-0.50 -0.70 -1.20
-- 135 190
-- 180 250
-- 240 500
-- 20 --
-- 18 --
-- 300 --
-- 120 --
-- 450 --
-- 180 --
-- 90 --
V
uA
nA
V
mR
ns
pF
-- 0.41 0.45
-- 35 200
V
uA
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AFSEMI SSC8K23GN2
SSC8K23GN2
Typical Performance Characteristics of P-Channel MOSFET
15
V = -6V
GS
12
9
V = -4.5V
GS
V = -2.5V
GS
6
V = -1.5V
GS
3
V = -1V
GS
0
01234
-V , Drain-Source Voltage(V)
DS
Fig 1. Output Characteristics
5
4
V = -200mV
DS
3
V = -100mV
2 DS
V = -50mV
1 DS
0
0 2 4 6 8 10
-V , Gate-Source Voltage(V)
GS
Fig 2. Transfer Characteristics
90
V = -2.5V
80 GS
70
V = -4.5V
GS
60
50
40
0 2 4 6 8 10
-I , Drain Current(A)
D
Fig 3. On-Resistance vs. Drain Current
120
100
80
V = -200mV
DS
V = -100mV
DS
V = -50mV
DS
60
0 2 4 6 8 10
-V , Gate-Source Voltage(V)
GS
Fig 4. On-Resistance vs.Gate-Source Valtage
1.0
0.8
0.6
0.4
V =V , I = -250 uA
GS DS D
0.2
0.0
-40
0 40 80 120 160
Tj, Junction Temperature(oC)
Fig 5. Threshold Voltage
100
80
VGS= -4.5V, ID= -3A
60
VGS= -8V, ID= -3A
40
20
-40
0
40 80 120 160
Tj, Junction Temperature(oC)
Fig 6. On-Resistance Temperature Coefficient
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