Zener Diode. ZEN056V130A24LS Datasheet

ZEN056V130A24LS Diode. Datasheet pdf. Equivalent

ZEN056V130A24LS Datasheet
Recommendation ZEN056V130A24LS Datasheet
Part ZEN056V130A24LS
Description Polymer Enhanced Zener Diode
Feature ZEN056V130A24LS; PolyZen Polymer Enhanced Zener Diode Micro-Assemblies PRODUCT: ZEN056V130A24LS DOCUMENT: SCD26730 R.
Manufacture TE
Datasheet
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TE ZEN056V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 1 OF 8
Specification Status: Released
GENERAL DESCRIPTION
TE PolyZen devices are polymer
enhanced, precision Zener diode micro-
assemblies. They offer resettable
protection against multi-Watt fault events
without the need for multi-Watt heat sinks.
The Zener diode used for voltage
clamping in a PolyZen micro-assembly
was selected due to its relatively flat
voltage vs current response. This helps improve output
voltage clamping, even when input voltage is high and diode
currents are large.
An advanced feature of the PolyZen micro-assembly is that
the Zener diode is thermally coupled to a resistively non-
linear, polymer PTC (positive temperature coefficient) layer.
This PTC layer is fully integrated into the device, and is
electrically in series between VIN and the diode clamped VOUT.
This advanced PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to
high resistance state, also known as ”tripping”. A tripped PTC
will limit current and generate voltage drop. It helps to protect
both the Zener diode and the follow on electronics and
effectively increases the diode’s power handling capability.
The polymer enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive
voltage spikes, voltage transients, incorrect power supplies
and reverse bias. These devices are particularly suitable for
portable electronics and other low-power DC devices.
BENEFITS
Stable Zener diode helps shield downstream
electronics from overvoltage and reverse bias
Trip events shut out overvoltage and reverse
bias sources
Analog nature of trip events minimizes
upstream inductive spikes
Minimal power dissipation requirements
Single component placement
FEATURES
Overvoltage transient suppression
Stable VZ vs fault current
Time delayed, overvoltage trip
Time delayed, reverse bias trip
Multi-Watt power handling capability
Integrated device construction
RoHS Compliant
TARGET APPLICATIONS
DC power port protection in portable
electronics
DC power port protection for systems using
barrel jacks for power input
Internal overvoltage & transient suppression
DC output voltage regulation
TYPICAL APPLICATION BLOCK DIAGRAM
Power Supply
(External or Internal)
PolyZen Protected Electronics
2 GND
VIN 1 PolyZen
+
Device
VOUT
3 Regulated
Output
RLoad
Protected downstream
electronics



TE ZEN056V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 2 OF 8
CONFIGURATION INFORMATION
Pin Configuration (Top View)
Recommended Pad Dimensions
VIN 1
2 GND
3 VOUT
2.21 mm
(0.087”)
0.33 mm
(0.013”)
0.94 mm
(0.037”)
0.94 mm
(0.037”)
PIN DESCRIPTION
Pin Number Pin Name
1 VIN
2 GND
3 VOUT
Pin Function
VIN. Protected input to Zener diode.
GND
VOUT. Zener regulated voltage output
0.56 mm
(0.022”)
2.88 mm
(0.1135”)
0.56 mm
(0.022”)
BLOCK DIAGRAM
Polymer PTC
VIN
Zener
Diode
VOUT
DEFINITION of TERMS
GND
IPTC
IFLT
IOUT
Trip Event
Trip
Endurance
Current flowing through the PTC portion of the
circuit
RMS fault current flowing through the diode
Current flowing out the VOUT pin of the device
A condition where the PTC transitions to a high
resistance state, thereby significantly limiting IPTC
and related currents, and significantly increasing
the voltage drop between VIN and VOUT.
Time the PTC portion of the device remains both
powered and in a tripped state.
VIN
IPTC
IOUT
IFLT
GND
VOUT



TE ZEN056V130A24LS
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 3 OF 8
GENERAL SPECIFICATIONS
Operating Temperature
Storage Temperature
-40º to +85ºC
-40º to +85ºC
ELECTRICAL CHARACTERISTICS1-3, 11 (Typical unless otherwise specified)
Min
VZ4
(V)
Typ
Izt4
(A)
IHOLD5
@20ºC
(A)
Max
Leakage Current
Test
Voltage
Max
Current
(mA)
R Typ6
(Ohms)
R1Max7
(Ohms)
VInt Max8
(V)
IFLT Max9
Tripped Power
Dissipation10
Max
VINT
Max
(V)
Test
Current
(A)
IFLT Max
(A)
Test
Voltage
(V)
Value
(W)
Test
Voltage
(V)
5.45 5.6 5.75 0.1 1.3
5.25
10
0.12
0.16
24V
3A
+10
-40
+24
-16V
1.0
24
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device
and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE
Connectivity Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
Note 4: Izt is the current at which Vz is measured (VZ = VOUT). Additional VZ values are available on request.
Note 5: IHOLD : Maximum steady state IPTC (current entering or exiting the VIN pin of the device) that will not generate a trip event at the
specified temperature. Specification assumes IFLT (current flowing through the Zener diode) is sufficiently low so as to prevent
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between VIN and VOUT pins during normal operation at room temperature.
Note 7: R1Max: The maximum resistance between VIN and VOUT pins at room temperature, one hour after 1st trip or after reflow
soldering.
Note 8: VINT Max: VINT Max relates to the voltage across the PPTC portion of the PolyZen device (VIN-VOUT). VINT Max is defined as
the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles
and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a
"shorted" load (VOUT = 0V). VINT Max is a survivability rating, not a performance rating.
Note 9: IFLT Max: IFLT Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault
condition, prior to a trip event. IFLT Max is defined as the current at which typical qualification devices (12 parts per lot from 3
lots) survived 100 test cycles. RMS fault currents above IFLT Max may permanently damage the diode portion of the PolyZen
device. Testing is conducted with NO load connected to VOUT, such that IOUT = 0. “Test voltage” is defined as the voltage
between VIN to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through
the diode. IFLT Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
MECHANICAL DIMENSIONS
Min
Typical
Max
Length
L
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Width
W
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Height
H
1.4mm
(0.055”)
1.7 mm
(0.067”)
2.0 mm
(0.081”)
Length
Diode
Ld
-
3.0 mm
(0.118”)
-
Height
Diode
Hd
-
1.0 mm
(0.039”)
-
Offset
O1
-
0.6 mm
(0.024”)
-
Offset
O2
-
0.7 mm
(0.028”)
-







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