Power MOSFET. EMB16N06G Datasheet

EMB16N06G MOSFET. Datasheet pdf. Equivalent

EMB16N06G Datasheet
Recommendation EMB16N06G Datasheet
Part EMB16N06G
Description N-Channel Trench Power MOSFET
Feature EMB16N06G; SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (V.
Manufacture Kexin
Datasheet
Download EMB16N06G Datasheet




Kexin EMB16N06G
SMD Type
N-Channel Trench Power MOSFET
EMB16N06G
MOSFET
Ƶ Features
ƽ VDS (V) = 60V
ƽ ID = 20 A (VGS = ±20V)
ƽ RDS(ON) ˘ 15m¡ (VGS =10V)
SOP-8
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter
Drain-Source Voltage ˄VGS=0V˅
Gate-Source Voltage ˄VDS=0V˅
Continuous Drain Current
Pulsed Drain Current
TC=25ć
TC=100ć
Power Dissipation
Thermal Resistance.Junction- to-Abmient
Junction Temperature
Storage Temperature Range
TC=25ć
TC=100ć
Symbol
VDS
VGS
ID
IDM
PD
RthJA
TJ
Tstg
Rating
60
±20
20
14
80
2.5
1.6
50
150
-55 to 150
Unit
V
A
W
ć/W
ć
www.kexin.com.cn 1



Kexin EMB16N06G
SMD Type
N-Channel Trench Power MOSFET
EMB16N06G
MOSFET
Ƶ Electrical Characteristics Ta = 25ć
Parameter
Drain-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time *1
Body Diode Reverse Recovery Charge *1
Forward Turn-on Time
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Diode Forward Voltage *1
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=250­A, VGS=0V
60
V
IDSS
VDS=60V, VGS=0V,TC=25ć
VDS=60V, VGS=0V,TC=100ć
1
­A
5
IGSS VDS=0V, VGS=±20V
±100 nA
VGS(th) VDS=VGS , ID=250­A
1 3V
RDS(On) VGS=10V, ID=20A
15 m¡
gFS VDS=10V, ID=15A
7
S
Ciss 2489
Coss VGS=0V, VDS=25V, f=1.0MHz
276 pF
Crss 128
Qg 80
Qgs VGS=10V, VDS=30V, ID=15A
19 nC
Qgd 37
td(on)
15
tr
td(off)
VGS=10V, VDS=30V, RL=2.5¡,
RGEN=3¡
25
50 ns
tf 23
trr
IF= 15A, dI/dt= 100A/­s,TJ=25ć
Qrr
24
30
nC
ton Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
IS
ISDM
20
A
80
VSD IS=20A,VGS=0V,TJ=25ć
1V
Notes˖*1.Pulse Test: Pulse Width İ 300ȝs, Duty Cycle İ 1.5%, Starting TJ=25ć
Ƶ Marking
Marking
16N06
KC***
2 www.kexin.com.cn







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)