IGBT. SGL50N60RUFD Datasheet

SGL50N60RUFD IGBT. Datasheet pdf. Equivalent

SGL50N60RUFD Datasheet
Recommendation SGL50N60RUFD Datasheet
Part SGL50N60RUFD
Description IGBT
Feature SGL50N60RUFD; SGL50N60RUFD — 600 V, 50 A Short Circuit Rated IGBT November 2013 SGL50N60RUFD 600 V, 50 A Short C.
Manufacture Fairchild Semiconductor
Datasheet
Download SGL50N60RUFD Datasheet




Fairchild Semiconductor SGL50N60RUFD
November 2013
SGL50N60RUFD
600 V, 50 A Short Circuit Rated IGBT
General Description
Fairchild’s RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Features
• 50 A, 600 V, TC = 100°C
• Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 50 A
• Typical Fall Time. . . . . . . . . .261ns at TJ = 125°C
• High Speed Switching
• High Input Impedance
• Short Circuit Rating
Applications
Motor Control, UPS, General Inverter.
C
G
GC E
TO-264
Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
TSC
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 25C
@ TC = 100C
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100C
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
E
Ratings
600
20
80
50
150
60
30
90
10
250
100
-55 to +150
-55 to +150
300
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(DIODE)
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
1.0
25
Unit
V
V
A
A
A
A
A
A
us
W
W
C
C
C
Unit
C/W
C/W
C/W
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
1
www.fairchildsemi.com



Fairchild Semiconductor SGL50N60RUFD
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES/
TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 uA
VGE = 0 V, IC = 1 mA
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Ic = 50 mA, VCE = VGE
IC = 50 A, VGE = 15 V
IC = 80 A, VGE = 15 V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE=30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc Short Circuit Withstand Time
Qg Total Gate Charge
Qge Gate-Emitter Charge
Qgc Gate-Collector Charge
Le Internal Emitter Inductance
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 25C
VCC = 300 V, IC = 50 A,
RG = 5.9 , VGE = 15 V,
Inductive Load, TC = 125C
VCC = 300 V, VGE = 15 V
@ TC = 100C
VCE = 300 V, IC = 50 A,
VGE = 15 V
Measured 5mm from PKG
600 --
--
V
-- 0.6 -- V/C
-- -- 250 uA
-- -- ± 100 nA
5.0 6.0 8.5
-- 2.2 2.8
-- 2.5 --
V
V
V
-- 3311 --
-- 399 --
-- 139 --
pF
pF
pF
-- 26 -- ns
-- 89 -- ns
--
66 100
ns
-- 118 200 ns
-- 1.68 --
mJ
-- 1.03 --
mJ
-- 2.71 3.8 mJ
-- 28 -- ns
-- 91 -- ns
--
68 110
ns
-- 261 400 ns
-- 1.7 -- mJ
-- 2.31 --
mJ
-- 4.01 5.62 mJ
10 -- -- us
-- 145 210 nC
-- 25 35 nC
-- 70 100 nC
-- 18 -- nH
Electrical Characteristics of DIODE TC = 25C unless otherwise noted
Symbol
Parameter
VFM Diode Forward Voltage
trr Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr Diode Reverse Recovery Charge
Test Conditions
IF = 30 A
TC = 25C
TC = 100C
TC = 25C
TC = 100C
IF= 30 A,
diF/dt = 200 A/us
TC = 25C
TC = 100C
TC = 25C
TC = 100C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
70
140
6
8
200
580
Max.
2.8
--
100
--
7.8
--
360
--
Unit
V
ns
A
nC
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
2
www.fairchildsemi.com



Fairchild Semiconductor SGL50N60RUFD
140 Common Emitter
TC = 25
120
20V 15V
100
12V
80
60 VGE = 10V
40
20
0
02468
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
140
Common Emitter
120 VGE = 15V
TC = 25℃ ━━
100 TC = 125------
80
60
40
20
0
1
10
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
5
Common Emitter
VGE = 15V
4
3
2
1
100A
50A
IC = 30A
0
-50 0 50 100 150
Case Temperature, TC []
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
60
VCC = 300V
Load Current : peak of square wave
50
40
30
20
10 Duty cycle : 50%
TC = 100
Power Dissipation = 70W
0
1 10
100
Frequency [KHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
TC = 25
16
12
8
100A
4 50A
IC = 30A
0
0 4 8 12 16
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
20
20
Common Emitter
TC = 125
16
12
8
100A
4 50A
IC = 30A
0
0 4 8 12 16
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
20
©1999 Fairchild Semiconductor Corporation
SGL50N60RUFD Rev. C1
3
www.fairchildsemi.com







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