IGBT. SGL5N150UF Datasheet

SGL5N150UF IGBT. Datasheet pdf. Equivalent

SGL5N150UF Datasheet
Recommendation SGL5N150UF Datasheet
Part SGL5N150UF
Description IGBT
Feature SGL5N150UF; SGL5N150UF SGL5N150UF IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGB.
Manufacture Fairchild Semiconductor
Datasheet
Download SGL5N150UF Datasheet




Fairchild Semiconductor SGL5N150UF
SGL5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
SGL5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GC E
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGL5N150UF
1500
± 20
10
5
20
125
50
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
1
25
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGL5N150UF Rev. B



Fairchild Semiconductor SGL5N150UF
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 5mA, VCE = VGE
IC = 5A, VGE = 10V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 10V, VGE = 0V,
f = 1MHz
VCC = 600 V
IC = 5A
RG =10
VGE = 10V
Inductive Load
TC = 25°C
VCE = 600 V, IC = 5A
VGE = 10V
Min. Typ. Max. Units
1500
--
--
-- -- V
-- 1.0 mA
-- ± 100 nA
2.0 3.0 4.0
-- 4.7 5.5
V
V
-- 780 --
-- 130 --
-- 70 --
pF
pF
pF
-- 10 -- ns
-- 15 -- ns
-- 30 50 ns
--
70 120
ns
-- 190 --
uJ
-- 100 --
uJ
-- 290 580 uJ
-- 30 45 nC
-- 3 5 nC
-- 15 25 nC
©2003 Fairchild Semiconductor Corporation
SGL5N150UF Rev. B



Fairchild Semiconductor SGL5N150UF
80
70
60
50
40
30
20
10
0
0
20 V
15 V
10 V
Vge=5 V
5 10 15
Vce [V]
20
Fig 1. Typical Output Characteristics
12
Vge = 10V
10
8
6
4
2
0
25 50 75 100 125 150
Tc []
Fig 3. Maximum Collector Current vs.
Case Temperature
12
Vcc = 600V
Load Current : peak of square wave
10
8
6
4
2 Duty cycle : 50%
Tc = 100 oC
Power Dissipation = 30W
0
0.1 1
10
Frequency [kHz]
100
1000
Fig 5. Load Current vs. Frequency
©2003 Fairchild Semiconductor Corporation
Vge=10V
50
40
30
20
10
Tc = 25
Tc = 100
0
0 4 8 12 16 20
Vce [V]
Fig 2. Typical Output Characteristics
8.0
Vge=10V
7.5
7.0
6.5 Ic =10A
6.0
5.5
5.0
Ic = 5A
4.5
4.0
20 40 60 80 100 120 140
Tc []
Fig 4. Saturation Voltage vs.
Case Temperature
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1E-5
1E-4
1E-3
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 6. Transient Thermal Impedance
of IGBT Junction to Case
SGL5N150UF Rev. B





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