IGBT. 50N60A Datasheet

50N60A IGBT. Datasheet pdf. Equivalent

50N60A Datasheet
Recommendation 50N60A Datasheet
Part 50N60A
Description IGBT
Feature 50N60A; HiPerFASTTM IGBT Surface Mountable IXGH50N60A IXGH50N60AS VCES = 600 V IC25 = 75 A VCE(sat) = 2.7 .
Manufacture IXYS
Datasheet
Download 50N60A Datasheet





IXYS 50N60A
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A
IXGH50N60AS
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
t = 275 ns
fi
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
V
GEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10
Clamped inductive load, L = 30 µH
P
C
T
C
= 25°C
TJ
TJM
T
stg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
75
50
200
ICM = 100
@ 0.8 VCES
250
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
M
d
Weight
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
TO-247 SMD
TO-247 AD
4g
6g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
TJ = 25°C
TJ = 125°C
600
2.5
V
5V
200 µA
1 mA
±100 nA
2.7 V
TO-247 SMD
(50N60AS)
G
E
TO-247 AD
(50N60A)
C (TAB)
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
l International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l High frequency IGBT
l High current handling capability
l 2nd generation HDMOSTM process
l MOS Gate turn-on
- drive simplicity
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l High power density
l Suitable for surface mounting
l Switching speed for high frequency
applications
l Easy to mount with 1 screw, TO-247
(insulated mounting screw hole)
© 1996 IXYS All rights reserved
92797H(9/96)



IXYS 50N60A
Symbol
gfs
C
ies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
td(off)
t
fi
Eoff
td(on)
tri
E
on
td(off)
tfi
Eoff
RthJC
RthCK
IXGH50N60A IXGH50N60AS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t 300 µs, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
25 35
4000
430
100
S
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
200 250 nC
35 50 nC
80 100 nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 30 µH,
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher
TJ or increased RG
Inductive
load,
T
J
=
125°C
IC = IC90, VGE = 15 V, L = 30 µH
VCE = 0.8 VCES, RG = Roff = 2.7
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES,
higher T or increased R
JG
50 ns
210 ns
200 ns
275 400 ns
4.8 mJ
50 ns
240 ns
3 mJ
280 ns
600 ns
9.6 mJ
0.50 K/W
0.25
K/W
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7
A 2.2
1
A 2.2
2
b 1.0
b 1.65
1
b2 2.87
C .4
D 20.80
E 15.75
e 5.20
L 19.81
L1
P 3.55
Q 5.89
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and (mm))
1. Gate
2. Collector
3. Emitter
4. Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
Dim.
A
A1
A2
b
b1
C
D
E
e
L
L1
L2
L3
L4
ØP
Q
R
S
Millimeter
Min. Max.
4.83
2.29
1.91
5.21
2.54
2.16
1.14
1.91
1.40
2.13
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
4.90
2.70
2.10
0.00
1.90
5.10
2.90
2.30
0.10
2.10
3.55
5.59
3.65
6.20
4.32
6.15
4.83
BSC
Inches
Min. Max.
.190
.090
.075
.205
.100
.085
.045 .055
.075 .084
.024 .031
.819 .840
.620 .635
.215 BSC
.193
.106
.083
.00
.075
.201
.114
.091
.004
.083
.140 .144
.220 .244
.170 .190
.242 BSC
5,017,508 5,049,961 5,187,117 5,486,715
5,034,796 5,063,307 5,237,481 5,381,025



IXYS 50N60A
IXGH50N60A IXGH50N60AS
Fig. 1 Saturation Characteristics
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
1
VGE = 15V
13V
11V
9V
7V
5V
23
VCE - Volts
4
5
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
10
9 TJ = 25°C
8
7
6
5
4
3
2 IC = 40A
1 IC = 20A
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
Fig. 5 Input Admittance
80
VCE = 100V
70
60
50
40
30
20
TJ = 25°C
10
TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
VGE - Volts
© 1996 IXYS All rights reserved
Fig. 2
Output Characterstics
350
300
VGE = 15V 13V
11V
250
9V
TJ = 25°C
200
150 7V
100
50
5V
0
0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
Fig. 4
1.5
Temperature Dependence
of Output Saturation Voltage
1.4 IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6
1.2
1.1
Temperature Dependence of
Breakdown and Threshold Voltage
VGE(th) @ 250µA
1.0
0.9
BVCES @ 3mA
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C





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