Power MOSFET. CS4N65FA9R-G Datasheet

CS4N65FA9R-G MOSFET. Datasheet pdf. Equivalent

CS4N65FA9R-G Datasheet
Recommendation CS4N65FA9R-G Datasheet
Part CS4N65FA9R-G
Description Silicon N-Channel Power MOSFET
Feature CS4N65FA9R-G; Silicon N-Channel Power MOSFET CS4N65F A9R-G ○R General Description: CS4N65F A9R-G, the silicon N.
Manufacture Huajing Microelectronics
Datasheet
Download CS4N65FA9R-G Datasheet





Huajing Microelectronics CS4N65FA9R-G
Silicon N-Channel Power MOSFET
CS4N65F A9R-G
R
General Description
CS4N65F A9R-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical:3.5pF)
l 100% Single Pulse avalanche energy Test
l Halogen Free
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
4
30
2.4
Rating
650
4
2.5
16
±30
200
5.0
30
0.24
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O. , LTD. Pag e 1 of 1 0
2015V01



Huajing Microelectronics CS4N65FA9R-G
CS4N65F A9R-G
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=2A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=15V, ID =2A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =4A VDD = 325V
RG =10
ID =4A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.67 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 2.4 2.8
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 3.5 --
-- 610 --
-- 53 --
-- 3.5 --
Units
S
pF
Rating
Min. Typ. Max.
-- 14 --
-- 16 --
-- 32 --
-- 11 --
-- 14.5 --
-- 3 --
-- 6.5 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 15V0 1



Huajing Microelectronics CS4N65FA9R-G
CS4N65F A9R-G
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Pulse width tp300µs,δ≤2%
Test Conditions
IS=4.0A,VGS=0V
IS=4.0A,Tj = 25
dIF/dt=100A/us,
VGS=0V
Min.
--
--
--
--
--
--
Rating
Typ. Max.
-- 4
-- 16
-- 1.5
256 --
1200 --
9.4 --
Units
A
A
V
ns
nC
A
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ. Units
4.17 /W
62.5 /W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10mH, ID=6.3A, Start TJ=25
a3ISD =4A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 201 5V01





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