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BM15N10

Bookly
Part Number BM15N10
Manufacturer Bookly
Description 100V N-Channel Enhancement Mode MOSFET
Published Dec 19, 2018
Detailed Description 100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transi...
Datasheet PDF File BM15N10 PDF File

BM15N10
BM15N10

Overview
100V N-Channel Enhancement Mode MOSFET BM15N10 DESCRIPTION The 15N10 is N channel enhancement mode power effect transitor which is produced using high cell density advanced trench technology.
The high density process is especially able to minize on-state resistance.
These devices are.
especially suited for low voltage application power management DC-DC converters.
FEATURE 100V/15 A,RDS(ON)=80.
0mΩ (typ.
)@VGS=10V 100V/8A, RDS(ON)=115mΩ(typ.
)@VGS= 4.
5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability Full RoHS compliance SOP8 ,SOT23 andTO252 package design 100% UIS Tested 100% Rg tested APPLICATIONS Power Management DC/DC Converter Load S...


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