N-Channel Enhancement Mode MOSFET
The SPN125T06 is the N-Channel logic enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suitable for synchronous
rectifier application, Motor control power management and
other Power Tool circuits. It has been optimized for low gate
charge, low RDS(ON) and fast switching speed.
AC/DC Synchronous Rectifier
60V/125A , RDS(ON)=4.3mΩ@VGS=10V
60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V
Super high density cell design for extremely low
Exceptional on-resistance and maximum DC
/PPAK5x6-8L/TO-263-2L package design
2017/3/22 Ver 4