Analog Power
AMA922N
Dual N-Channel 20-V (D-S) MOSFET
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Power Routing
• Li Ion Battery Packs
• Level Shifting and Driver Circuits
VDS (V)
20
PRODUCT SUMMARY
rDS(on) (mΩ)
23 @ VGS = 4.5V
33 @ VGS = 2.5V
ID (A)
6.6
5.6
DFN2x2-6L
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
IDM
IS
6.6
5.3
25
2.1
Power Dissipation a
TA=25°C
TA=70°C
PD
1.5
0.95
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
50
105
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AMA922N_1C
