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B11NM80 Datasheet, Equivalent, Power MOSFET.N-CHANNEL Power MOSFET N-CHANNEL Power MOSFET |
　
　
　
| Part | B11NM80 |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STB11NM80, STF11NM80 STI11NM80, STP11NM8 0, STW11NM80
N-channel 800 V, 0. 35 Ω, 11 A MDmeshâ„¢ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Featu res Order codes VDSS RDS(on) max RDS (on)*Qg ID STB11NM80 STF11NM80 STI11N M80 800 V STP11NM80 STW11NM80 < 0. 40 Î © 14Ω*nC 11 A â– Low input capacit ance and gate charge â– Low gate input resistance â– Best RDS(on)*Qg in the industry Applications â– Switching ap plications Description These N-channel Power MOSFETs are developed using STMi croelectronics' revolutionary MDmeshâ„¢ technology, which associates the multi ple drain process with the comp . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | B11NM80 |
|---|---|
| Description | N-CHANNEL Power MOSFET |
| Feature | STB11NM80, STF11NM80 STI11NM80, STP11NM8 0, STW11NM80
N-channel 800 V, 0. 35 Ω, 11 A MDmeshâ„¢ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Featu res Order codes VDSS RDS(on) max RDS (on)*Qg ID STB11NM80 STF11NM80 STI11N M80 800 V STP11NM80 STW11NM80 < 0. 40 Î © 14Ω*nC 11 A â– Low input capacit ance and gate charge â– Low gate input resistance â– Best RDS(on)*Qg in the industry Applications â– Switching ap plications Description These N-channel Power MOSFETs are developed using STMi croelectronics' revolutionary MDmeshâ„¢ technology, which associates the multi ple drain process with the comp . |
| Manufacture | STMicroelectronics |
| Datasheet |
　
　
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