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I8N25 Datasheet, Equivalent, Power MOSFET.8A 250V N-channel Enhancement Mode Power MOSFET 8A 250V N-channel Enhancement Mode Power MOSFET |
| Part | I8N25 |
|---|---|
| Description | 8A 250V N-channel Enhancement Mode Power MOSFET |
| Feature | 8N25/F8N25/I8N25/ E8N25/B8N25/D8N25
8A 2 50V N-channel Enhancement Mode Power MO SFET
1 Description
These N-channel Enh anced VDMOSFETs, is obtained by the sel f-aligned planar technology which reduc e the conduction loss, improve switchin g performance and enhance the avalanche energy. Which accords with the RoHS st andard. VDSS = 250V RDS(on) （TYP)= 0 . 4Ω ID = 8A 2 Features • Fast Switc hing • Low ON Resistance(Rdson≤0. 47 Ω) • Low Gate Charge(Typical Data:12 nC) • Low Reverse Transfer Capacitanc es(Typical:7pF) • 100% Single Pulse A valanche Energy Test • 100% ΔVDS Tes t TO-220C TO-220F TO-262 3 Appl . |
| Manufacture | ROUM |
| Datasheet |
| Part | I8N25 |
|---|---|
| Description | 8A 250V N-channel Enhancement Mode Power MOSFET |
| Feature | 8N25/F8N25/I8N25/ E8N25/B8N25/D8N25
8A 2 50V N-channel Enhancement Mode Power MO SFET
1 Description
These N-channel Enh anced VDMOSFETs, is obtained by the sel f-aligned planar technology which reduc e the conduction loss, improve switchin g performance and enhance the avalanche energy. Which accords with the RoHS st andard. VDSS = 250V RDS(on) （TYP)= 0 . 4Ω ID = 8A 2 Features • Fast Switc hing • Low ON Resistance(Rdson≤0. 47 Ω) • Low Gate Charge(Typical Data:12 nC) • Low Reverse Transfer Capacitanc es(Typical:7pF) • 100% Single Pulse A valanche Energy Test • 100% ΔVDS Tes t TO-220C TO-220F TO-262 3 Appl . |
| Manufacture | ROUM |
| Datasheet |
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