I25N10 Datasheet (data sheet) PDF





I25N10 Datasheet, 25A 100V N-channel Enhancement Mode Power MOSFET

I25N10   I25N10  

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25N10/F25N10/I25N10/ E25N10/B25N10/D25N1 0 25A 100V N-channel Enhancement Mode P ower MOSFET 1 Description These N-chan nel Enhanced VDMOSFETs Used advanced tr ench technology design, provided excell ent RDSON and low gate charge. Which ac cords with the RoHS standard. 2 Feature s ● Fast Switching ● Low ON Resista nce(Rdson≤36mΩ) ● Low Gate Charge( Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Sin gle Pulse Avalanche Energy Test ● 100 % ΔVDS Test 3 Applications ● Power s witching applications ● LED Boost ● UPS power supply ● Load switch VDSS = 100V RDS(on) (TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 El

I25N10 Datasheet, 25A 100V N-channel Enhancement Mode Power MOSFET

I25N10   I25N10  
ectrical Characteristics 4.1 Absolute M aximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Value 25N10 /I25N10/E25N10 /B25N10/D25N10 Maximum Drian-Source DC Voltage VDS 100 Maxi mum Gate-Drain Voltage VGS ±20 Drain Current(continuous) ID(T=25℃) T=100℃) 30 21 Drain Current(Pul sed)(Note








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