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GF100N30

STMicroelectronics

IGBT


Description
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel ...



STMicroelectronics

GF100N30

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