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CS1010EA8

Huajing Microelectronics
Part Number CS1010EA8
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Jan 30, 2019
Detailed Description Silicon N-Channel Power MOSFET CS1010E A8 ○R General Description： CS1010E A8, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS1010EA8 PDF File

CS1010EA8
CS1010EA8

Overview
Silicon N-Channel Power MOSFET CS1010E A8 ○R General Description： CS1010E A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤12mΩ) l Low Gate Charge (Typical Data:75nC) l Low Reverse transfer capacitances(Typical:75pF) l 100% Single Pulse avalanche energy Test VDSS ID PD (TC=25℃) RDS(ON)Typ 60 V 120 A 230 W 7.
5 mΩ App...


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