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POWER MOSFET. W80NF06 Datasheet

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POWER MOSFET. W80NF06 Datasheet
















W80NF06 MOSFET. Datasheet pdf. Equivalent













Part

W80NF06

Description

N-CHANNEL POWER MOSFET



Feature


STP80NF06 - STB80NF06 STW80NF06 N-channe l 60V - 0.0065Ω - 80A TO-220/D2PAK/TO -247 STripFET II™ Power MOSFET Featu res Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V ■ 100% avalanche tested ■ Low threshold drive RDS(on) <0.008Ω <0.008Ω <0.008Ω ID 80A 80A 80A Description This Power MOSFET is the latest development of STMicroele ctronics unique "Single Feature .
Manufacture

STMicroelectronics

Datasheet
Download W80NF06 Datasheet


STMicroelectronics W80NF06

W80NF06; Size™" strip-based process. The result ing transistor shows extremely high pac king density for low on-resistance, rug ged avalanche characteristics and less critical alignment steps therefore a re markable manufacturing reproducibility. 3 2 1 TO-220 TO-247 3 1 D²PAK Inte rnal schematic diagram Applications Switching application Order codes Pa rt number STB80NF06T4 S.


STMicroelectronics W80NF06

TP80NF06 STW80NF06 May 2007 Marking B80 NF06 P80NF06 W80NF06 Package D²PAK TO -220 TO-247 Rev 5 Packaging Tape & re el Tube Tube 1/14 www.st.com 14 Cont ents Contents STP80NF06 - STB80NF06 - STW80NF06 1 Electrical ratings . . . . . . . .


STMicroelectronics W80NF06

.





Part

W80NF06

Description

N-CHANNEL POWER MOSFET



Feature


STP80NF06 - STB80NF06 STW80NF06 N-channe l 60V - 0.0065Ω - 80A TO-220/D2PAK/TO -247 STripFET II™ Power MOSFET Featu res Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V ■ 100% avalanche tested ■ Low threshold drive RDS(on) <0.008Ω <0.008Ω <0.008Ω ID 80A 80A 80A Description This Power MOSFET is the latest development of STMicroele ctronics unique "Single Feature .
Manufacture

STMicroelectronics

Datasheet
Download W80NF06 Datasheet




 W80NF06
STP80NF06 - STB80NF06
STW80NF06
N-channel 60V - 0.0065- 80A TO-220/D2PAK/TO-247
STripFET II™ Power MOSFET
Features
Type
STB80NF06
STP80NF06
STW80NF06
VDSS
60V
60V
60V
100% avalanche tested
Low threshold drive
RDS(on)
<0.008
<0.008
<0.008
ID
80A
80A
80A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220
TO-247
3
1
D²PAK
Internal schematic diagram
Applications
Switching application
Order codes
Part number
STB80NF06T4
STP80NF06
STW80NF06
May 2007
Marking
B80NF06
P80NF06
W80NF06
Package
D²PAK
TO-220
TO-247
Rev 5
Packaging
Tape & reel
Tube
Tube
1/14
www.st.com
14




 W80NF06
Contents
Contents
STP80NF06 - STB80NF06 - STW80NF06
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14




 W80NF06
STP80NF06 - STB80NF06 - STW80NF06
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (vgs = 0)
VGS Gate- source voltage
ID(1) Drain current (continuous) at TC = 25°C
ID
IDM (2)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
Tj Max. operating junction temperature
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj= 25°C, ID= 40A, VDD=40V
Table 2. Thermal data
Rthj-case Thermal resistance junction-case Max
Rthj-a Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
60
±20
80
80
320
300
2
870
– 65 to 175
175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
0.5 °C/W
62.5 °C/W
300 °C
3/14




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