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IXTH02N450HV

High Voltage Power MOSFET

Description

High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS ID25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temper...

IXYS

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IXTH02N450HV High Voltage Power MOSFET - IXYS

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