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FIELD EFFECT POWER TRANSISTOR
IRF350,351 D86FQ2,Q1
15AMPERE5 400, 350 VOLT5
R05(ON) =0.3 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching a...
