~D~[P~
FIELD EFFECT POWER TRANSISTOR
IRFD120,121
D82CL2,K2
1.3 AMPERES
100,60 VOLTS
RDS(ON) = 0.3 n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device rugged-
ness and reliability.
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
ODRAIN
SOURCE
GATE
A 1I---'--±~0.245(6.2211
I
~
II--fM5~A:XI.---lI
- T(03.1.02401
0.040 (1.021
0.15
(3.8,1
~I 0.300---1
r-~ (7.62)
o.,oo~~61
0.022(0.5-1
(2541
0.15 .
(3.81)
maximum ratings (TA = 25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1M!l
Continuous Drain Current @TA = 25°C(1)
@TA= 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power DiSSipation @ TA = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
TJ, TSTG
IRFD120/D82CL2
100
100
1.3
0.85
5.2
±20
1.0
8
-55 to 150
IRFD121/D82CK2
60
60
1.3
0.85
5.2
±20
1.0
8
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Ambient(1)
Maximum Lead Temperature for Soldering
Purposes: 'h" from Case for 5 Seconds
R8JA
TL
125
300
125
300
(1) Oevice mounted to vertical pc board in free air with drain lead soldered to 0.20 in2 minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
UNITS
Volts
Volts
A
A
A
Volts
Watts
mW/oC
°C
°CIW
°C
237
