~D~ยท~~U
FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applic...
