~~D~~~ IRFF320,321
FIELD EFFECT POVVER TRANSISTOR
2.5 AMPERES
400, 350 VOLTS
RDS(ON) = 1.8 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most swi...
